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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type 2SD1196 DARLINGTON High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer Hammer drivers Relay drivers, Voltage regulator control. PINNING PIN 1 2 3 Base DESCRIPTION 2SB886 Collector;connected to mounting base Emitter PARAMETER Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -110 -100 -6 -8 -12 UNIT V V V A A TC=25ae PC Collector dissipation 40 W 1.75 Tj Tstg Junction temperature Storage temperature 150 -50~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency DC current gain CONDITIONS IC=-50mA; RBE= IC=-5mA; IE=0 IC=-4A; IB=-8mA IC=-4A; IB=-8mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-4A ; VCE=-5V IC=-4A ; VCE=-3V 1500 20 MIN -100 -110 -1.0 TYP. 2SB886 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO fT hFE MAX UNIT V V -1.5 -2.0 -0.1 -3.0 V V mA mA MHz Switching times ton tstg tf Fall time ANG Turn-on time Storage time INCH SEM E IC=-4A;IB1=-IB2=-8mA RL=12.5| ,Duty cycleU VCC=50V OND IC 1% TOR UC 4000 0.7 1.4 1.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB886 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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